Device Integration Engineers

SanDisk Corporation needs Device Integration Engineers in Milpitas, California to be Responsible for full device process integration flow for both current 1Z node and future 1A and 1B technology. Responsible for new material research including new IPD, Charge trap materials, hi-K materials, nano-particle devices, new device structures and build processes from these new materials for flash memory. Measure, collect and analyze device data from the fabs and from experimental splits. Carry out specific experiments, take data and analyze processes and devices from experimental wafers. Interface with several engineering departments in design, product devices, test group, product engineering, including wafer foundries. Participate in cost reduction in each of the modules, as well as the entire process for the technology. Interact with unit process engineering team for a total solution at the current production and future technology nodes. Put together step by step process in three areas FEOL (front end of the line), MOL (Middle of the line), and BEOL (Back end of the line). Cover detail characterization of unit modules included in the FEOL, MOL, and BEOL mentioned. Operate different process tools such as for films deposition, lithography, SEM, and TEG electrical measurements. Responsible for new materials research, new device structures to develop the future technology nodes, specifically beyond 1Z, while optimizing the current 1Z processes with high yield, high reliability. Complete research and develop full metal gates, high-k materials, and include nano devices for new cell architecture below 1Z dimension. Measure, collect and analyze device data from the fab and from experimental splits from now until products matured out on the market. Work closely with Toshiba Japan Team and SanDisk Development teams on all aspects of cell and implement cost reduction from start.
Employer will accept Masters degree in Electrical Engineering, Physics, Chemical Engineering, Computer Science or related technical field and minimum of 4 years of work experience in job offered or minimum of 4 years of work experience in an Integration Engineer-related occupation. Education or experience must include:
1. Process development for 56nm Generation NAND Flash, and Setup 2 products(4G D2 ABL and 16G D2 ABL);
2. Process development for 43nm Generation NAND Flash, and Setup 2 products(16G D2 ABL and 16G D3 ABL);
3. Process development for 32nm Generation NAND Flash, and Leading 16G D3 ABL setup project;
4. Process development for 24nm Generation NAND Flash, and Leading 16G D2 ABL setup project;
5. Process development for 19nm Generation NAND Flash, and 64G D2/D3 ABL setup project; and,
6. Process development for A19nm Generation NAND Flash.
Experience may be gained concurrently. Must be available to work on projects at various, unanticipated sites throughout the United States and abroad.
To apply, please reference job code #SD451 when mailing resume to:
SanDisk Corporation
951 SanDisk Drive
MS: HRGM
Milpitas, CA 95035

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